Emerging Spin Dynamics towards Next-Generation Spintronic Devices

Visual representation of key spintronics concepts including magnetic random-access memory structures, novel magnetic material compositions, racetrack memory design, and models of emerging spin dynamics.

Spintronics exploits the electron spin in addition to its charge to store, transport and process information. By enabling non-volatility, fast dynamics and low-energy manipulation of magnetic states, spintronic devices are regarded as promising building blocks for next-generation information technologies beyond conventional CMOS electronics. With rapidly growing computing demands driven by artificial intelligence and data-intensive applications, understanding and controlling spin-dependent phenomena has become a critical challenge in condensed matter physics and nanotechnology.

Our group pioneers spintronic research at the interface of fundamental physics and emerging device technologies. We investigate the fundamental mechanisms governing spin transport, spin–orbit torques [1-3], magnetic switching [4] and current-driven domain-wall dynamics [5-8], while developing novel spintronic materials and device concepts. Our research spans atomically engineered thin films, magnetic multilayers, synthetic antiferromagnets, antiferromagnets, ferrimagnets and emerging two-dimensional materials [9], providing new platforms for efficient magnetization control. These studies lay the foundation for innovative spintronic devices, including racetrack memories [10] and other magnetic nanodevices for future information technologies.

Research is carried out in one of the world's leading spintronics laboratories, comprising more than 1,400 m² of state-of-the-art research facilities. We combine advanced thin-film growth and characterization, nanofabrication, electrical transport measurements, microwave spectroscopy, (magneto-)optical microscopy and spectroscopy, cryogenic measurements, and micromagnetic modelling. This unique infrastructure enables the development of next-generation spintronic devices, including racetrack memories, magnetic tunnel junctions and three-dimensional architectures [11-12], with potential applications in energy-efficient memory, logic, neuromorphic and probabilistic computing [13].

Your goals

Growth and characterization of magnetic thin films heterostructures.
Fabrication of micro-/nano-structured devices in cleanroom.
Optical measurements of magnetic domain wall motion and switching processes.
Magneto-transport measurements.
Exploring novel spin torque layers and magnetic materials (e.g., non-collinear antiferromagnets).

Your profile

We are seeking a highly motivated candidate with

An MSc degree in physics, materials science or related fields including a final thesis project.
Demonstrated track record of excellence in research and coursework.
Excellent written and spoken English communication skills.
Solid knowledge of magnetism fundamentals.
A background in spintronics and/or practical experience with thin film growth and characterization, cleanroom processing and nanofabrication, (magneto)-optics, (high-frequency) electronics, or lab automatization (Python, LabView) is advantageous but not required.

Why join us?

This fully funded PhD position provides the opportunity to work in a dynamic research environment equipped with state-of-the-art nanofabrication and cryogenic measurement facilities under the supervision of Prof. Dr. Stuart S. P. Parkin in the NISE (Nano-systems from Ions, Spins and Electrons) department at MPI Halle. The project offers significant scope for high-impact research at the forefront of condensed matter physics and nanotechnology.

Contact

For scientific questions about the possible PhD topic, please contact the responsible scientists. For formal question regarding the application, please contact Michael Strauch.

References:

[1] B. Hazra et al., Nat. Commun. 14 (2023)
[2] P. Wang et al., Adv. Mater. 37 (2025)
[3] P. Wang et al., Adv. Mat. 34 (2022)
[4] B. Pal et al., Sci. Adv. 8 (2022)
[5] S. S. P. Parkin and S.-H. Yang, Nat. Nanotechnol. 10 (2015)
[6] Y. Guan et al., Adv. Mater. 33 (2021)
[7] J. Yoon et al., Nat. Nanotechnol. 17 (2022)
[8] C. Durner et al., ACS Nano 19 (2025)
[9] Y. Guan et al. Nat. Commun. 16 (2025)
[10] S. S. P. Parkin et al., Science 320, (2008)
[11] K. Gu et al., Nat. Nanotechnol. 17 (2022)
[12] A. Farinha et al., Nature 639 (2025)
[13] J.-C. Jeon et al., Science 386 (2024)